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◉ The TPM2003 is a high-voltage, high-current NMOS transistor array. This device consists of seven channels of low-side NMOS transistors with high-voltage outputs and free-wheeling diodes for inductive loads. The maximum drain-current rating of a single NMOS channel is 500 mA.
◉ The maximum drain-current rating of a single NMOS channel is 500 mA. The device supports a wide I/O voltage range from 1.8 V to 30 V.
◉ The transistors can drive in parallel for higher current capability. Enhanced ESD performance enhances system-level reliability.
◉ The TPM2003 can replace traditional Bipolar Darlington arrays with better thermal efficiency and reliability.
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