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Discrete devices refer to independently packaged, single-function semiconductor or electronic components in electronic circuits, as opposed to integrated circuits (ICs). They typically perform only one basic function (such as switching, amplification, rectification) and achieve complex functions through combinations of external circuits. As the fundamental building blocks of electronic systems, discrete devices are widely used in fields like power management, signal processing, and power conversion. Common examples include diodes, transistors, resistors, capacitors, inductors, etc.
A fuse is a critical sA DC contactor is a specialized electromechanical switch for direct current circuits, using an electromagnet to actuate contacts and enable controlled connection or disconnection of high-current DC circuits, while safely switching DC loads, providing circuit isolation, facilitating remote operation of high-power DC systems, and ensuring reliable current control in DC-powered equipment such as electric vehicles, battery storage systems, industrial DC drives, and renewable energy (solar/wind) DC components.
| Part No. | Contact Arrangement | Contact Resistance | Contact Rating | Coil Rated Voltage | Max. Contact Voltage | Max. Contact Current | Auxiliary Contact |
| EVHC50-12S/24S | 1A | ≤2mΩ（@50A &20℃） | 50A | 12V/24V | 1500VDC | 300A@500V 2times | without |
| EVHC50A-12S/24S | 1A | ≤2mΩ（@50A &20℃） | 50A | 12V/24V | 1500VDC | 300A@500V 2times | with |
| EVHC100-12S/24S | 1A | ≤2mΩ（@100A &20℃） | 100A | 12V/24V | 1500VDC | 300A@500V 3times | without |
| EVHC100A-12S/24S | 1A | ≤2mΩ（@100A &20℃） | 100A | 12V/24V | 1500VDC | 300A@500V 3times | with |
| EVHB150-12B/24B | 1A | ≤1mΩ（@150A &20℃） | 150A | 12V/24V | 1500VDC | 2500A@300V 1time | without |
| EVHB150A-12B/24B | 1A | ≤1mΩ（@150A &20℃） | 150A | 12V/24V | 1500VDC | 2500A@300V 1time | with |
| EVHB200-12B/24B | 1A | ≤1mΩ（@200A &20℃） | 200A | 12V/24V | 1500VDC | 2500A@300V 2times | without |
| EVHB200A-12B/24B | 1A | ≤1mΩ（@200A &20℃） | 200A | 12V/24V | 1500VDC | 2500A@300V 2times | with |
| EVHB250-12B/24B | 1A | ≤1mΩ（@250A &20℃） | 250A | 12V/24V | 1500VDC | 2500A@300V 3times | without |
| EVHB250A-12B/24B | 1A | ≤1mΩ（@250A &20℃） | 250A | 12V/24V | 1500VDC | 2500A@300V 3times | with |
| JEB300-12B/24B | 1A | ≤0.3mΩ（@300A &20℃） | 300A | 12V/24V | 1500VDC | 3500A@300V 1time | without |
| JEB300A-12B/24B | 1A | ≤0.3mΩ（@300A &20℃） | 300A | 12V/24V | 1500VDC | 3500A@300V 1time | with |
| JEB350-12B/24B | 1A | ≤0.3mΩ（@350A &20℃） | 350A | 12V/24V | 1500VDC | 4000A@300V 1time | without |
| JEB350A-12B/24B | 1A | ≤0.3mΩ（@350A &20℃） | 350A | 12V/24V | 1500VDC | 4000A@300V 1time | with |
| JEB450-12B/24B | 1A | ≤0.3mΩ（@450A &20℃） | 450A | 12V/24V | 1500VDC | 4500A@300V 1time | without |
| JEB450A-12B/24B | 1A | ≤0.3mΩ（@450A &20℃） | 450A | 12V/24V | 1500VDC | 4500A@300V 1time | with |
| JEB550-12B/24B | 1A | ≤0.3mΩ（@550A &20℃） | 550A | 12V/24V | 1500VDC | 5000A@300V 1time | without |
| JEB550A-12B/24B | 1A | ≤0.3mΩ（@550A &20℃） | 550A | 12V/24V | 1500VDC | 5000A@300V 1time | with |
A transistor is a semiconductor device consisting of three semiconductor regions and their corresponding electrodes. It is classified into NPN type and PNP type. Its operation is based on the movement of carriers and current control. When the base and the emitter are forward-biased, most of the carriers in the emitter are injected into the base region, and then part of them diffuse to the collector region to form the collector current. Moreover, a small change in the base current can lead to a significant change in the collector current. The important parameters include current amplification factor, parameters related to cut-off and saturation characteristics, and frequency characteristic parameters, etc. It is applied in fields such as amplification circuits, switching circuits, and signal modulation and demodulation.
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